THP210_V01

THP210 Ultra-Low Offset, High-Voltage, Low-Noise, Precision, Fully-Differential Amplifier

EIS-D210_V01

WirelessConnectivityEdgeIntelligenceServer

INA210_V01

INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: –

IRFD210_V01

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

TSC210_V01

High/low-side,bidirectional,zero-driftcurrentsenseamplifiers

Features •Widecommonmodevoltage:-0.3to26V •Offsetvoltage:±35μVmax.(TSC210) •2.7to26Vsupplyvoltage •Differentgainavailable •–TSC210(200V/V) –TSC211(500V/V) –TSC212(1000V/V) –TSC213(50V/V) –TSC214(100V/V) –TSC215(75V/V) •Gainerror:±1%max.

VSSA210_V01

Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionsofcompliance pleasesee