零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
TGA2624 | 9 – 10 GHz 18 Watt GaN Power Amplifier KeyFeatures •FrequencyRange:9–10GHz •PSAT:42.5dBm(PIN=15dBm) •P1dB:>38dBm •PAE:>40%(PIN=15dBm) •LargeSignalGain:27.5dB •SmallSignalGain:>35dB •ReturnLoss:>11dB •Bias:VD=28V,IDQ=365mA •PulsedVD:PW=100usandDC=10% •DieDime | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | |
TGA2624 | 9 - 10 GHz, 18 Watt GaN Power Amplifier; • Frequency range: 9 - 10 GHz\n• PSAT: 42.5dBm\n• PAE: >40 %\n• Small signal gain: >35dB\n• Return loss: >11dB\n• Bias: VD = 28 V (CW or Pulsed), IDQ = 365 mA, VG = -2.7 V typical\n• Pulsed VD: PW = 100 us, DC = 10%\n• Chip dimensions: 5.0 x 2.62 x 0.10 mm\n; Qorvo's TGA2624 is an x-band, high power MMIC amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGA2624 operates from 9 to 10GHz and provides a superior combination of power, gain and efficiency. Achieving 18W of saturated output power with 27.5dB of large signal gain and greater than 40% power-added efficiency, the TGA2624 provides the level of performance demanded by today's system architectures. Depending on the system requirements, the TGA2624 can support cost saving initiatives on existing systems while supporting next generation systems with increased performance.\nLead-free and RoHS compliant\nEvaluation Boards are available upon request.\nFor additional information on GaN thermal performance refer to the following application note and video.\n | QorvoQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | Qorvo | |
TGA2624 | 9 to 10GHz 18W GaN Power Amplifier | TriQuint TriQuint Semiconductor | TriQuint | |
9 - 10 GHz, 16 Watt GaN Power Amplifier; • Frequency range: 9 – 10 GHz\n• Pout: 42 dBm (PIN = 15 dBm)\n• PAE: > 37 % (PIN = 15 dBm)\n• Power gain: 27 dB (PIN = 15 dBm)\n• Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical (pulsed: PW = 100 us, DC = 10%)\n• Package dimensions: 15.2 x 15.2 x 3.5 mm\n• Package base is pure Cu offering superior thermal management\n; Qorvo's TGA2624-CP is a packaged high-power X-Band amplifier fabricated on Qorvo's TQGaN25 0.25 um GaN on SiC process. Operating from 9 to 10 GHz, the TGA2624-CP achieves 42 dBm saturated output power, a power-added efficiency of > 37 %, and power gain of 27 dB.\nThe TGA2624-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and CW conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.\nThe TGA2624-CP is ideally suited for both commercial and defense applications.\nLead free and RoHS compliant.\nEvaluation Boards are available upon request.\n | QorvoQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | Qorvo | ||
9 – 10 GHz 18 Watt GaN Power Amplifier KeyFeatures •FrequencyRange:9–10GHz •PSAT:42.5dBm(PIN=15dBm) •P1dB:>38dBm •PAE:>40%(PIN=15dBm) •LargeSignalGain:27.5dB •SmallSignalGain:>35dB •ReturnLoss:>11dB •Bias:VD=28V,IDQ=365mA •PulsedVD:PW=100usandDC=10% •DieDime | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
9 - 10 GHz, 20 Watt GaN Power Amplifier; • Frequency range: 9 - 10 GHz\n• Pout: 43 dBm (PIN = 18 dBm)\n• PAE: > 40 % (PIN = 18 dBm)\n• Power gain: 25 dB (PIN = 18 dBm)\n• Bias: VD = 28 V, IDQ = 365 mA, VG = -2.5 V typical (Pulsed: PW = 100 us, DC = 10%)\n• Package dimensions: 7 x 7 x 1.75 mm\n; Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain.\nThe TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.\nLead-free and RoHS compliant.\nEvaluation boards are available upon request.\nFor additional information on GaN thermal performance refer to the following application note and video.\n | QorvoQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | Qorvo | ||
9 to 10GHz 18W GaN Power Amplifier | TriQuint TriQuint Semiconductor | TriQuint | ||
9 to 10 GHz, 16 W GaN Power Amplifier | TriQuint TriQuint Semiconductor | TriQuint | ||
9 to 10 GHz, 16 W GaN Power Amplifier | TriQuint TriQuint Semiconductor | TriQuint | ||
9??0 GHz 20 W GaN Power Amplifier | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO |
技术参数
- 频率最大值(GHz):
10
- Pout(W):
18
- 增益(dB):
> 35
- PAE(%):
> 40
- 电压(V):
28
- 电流(mA):
365
- 封装类型:
Die
- 封装(mm):
5.0 x 2.62 x 0.1
- RoHS:
Yes
- Lead Free:
Yes
- Halogen Free:
Yes
- ITAR Restricted:
No
- ECCN:
3A001.B.2.B.2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MINI |
24+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
询价 | ||
TriQuin |
24+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
TriQuint |
16+ |
NA |
3000 |
全新进口原装 |
询价 | ||
QORVO |
24+ |
36000 |
原装现货假一赔十 |
询价 | |||
QORVO |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
QORVO |
23+ |
Die |
14500 |
QORVO优势渠道在售 |
询价 | ||
TriQuin |
25+23+ |
BGA |
20450 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TRIQUINT |
638 |
原装正品 |
询价 | ||||
Qorvo(威讯联合) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 | ||
Qorvo |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
询价 |
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