13 - 15 GHz 4W Power Amplifier

Key Features • 0.5 um pHEMT Technology • >25 dB Nominal Gain • >36 dBm Nominal Psat • 44 dBm Nominal IP3 @ 14 GHz • Bias 7V @ 1.3A Idq, 2.1A under RF drive • Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Primary Applications • Ku-Band VSAT Transmit

文件：180.67 Kbytes 页数：9 Pages

TriQuint

13 15 GHz 4W Power Amplifier

文件：435.2 Kbytes 页数：10 Pages

TriQuint

13 15 GHz 4W Power Amplifier

文件：435.2 Kbytes 页数：10 Pages

TriQuint

SINGLE PHASE2.5AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

文件：219.64 Kbytes 页数：2 Pages

CHONGQING

平伟实业

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

文件：455.3 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input

文件：471.67 Kbytes 页数：5 Pages

SUTEX