TFDT6501E

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation;

TFDT6501E

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

TFDT6501E-TR4

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

THN6501

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

THN6501E

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

THN6501E

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange