首页 >TFDS6501E-TRG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FastInfraredTransceiverModuleFamily(FIR,4Mbit/s)for2.6Vto5.5VOperation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
NPNSiGeRFTRANSISTOR □Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | TACHYONICS Tachyonics CO,. LTD | TACHYONICS | ||
NPNSiGeRFTRANSISTOR □Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | TACHYONICS Tachyonics CO,. LTD | TACHYONICS | ||
SiGeNPNTransistor □Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | AUK AUK corp | AUK | ||
SiGeNPNTransistor □Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighGain MAG=11.5dBatf=1GHz,VCE=10V,IC=20mA oHighTransitionFrequency fT=7GHzatf=1GHz,VCE=10V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | AUK AUK corp | AUK | ||
NPNSiGeRFTRANSISTOR □Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | TACHYONICS Tachyonics CO,. LTD | TACHYONICS | ||
SiGeNPNTransistor □Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | AUK AUK corp | AUK | ||
SiGeNPNTransistor □Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | AUK AUK corp | AUK | ||
NPNSiGeRFTRANSISTOR □Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | TACHYONICS Tachyonics CO,. LTD | TACHYONICS | ||
NPNSiGeRFTRANSISTOR □Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange | TACHYONICS Tachyonics CO,. LTD | TACHYONICS |
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