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TPC2190M-QFNR

8-ChannelhighprecisionVoltageoutputDACwithinternalReference

Features •Highaccuraccy –INL:typical±1LSBat16-bitResolution •Integrated2.5VInternalReference –LowDrift:5ppm/℃ •Flexibleoutputconfiguration –UserselectableGain:1/2,1,2 –ResettoZeroScaleorMidscale •Highoutputcurrentcapability:20mA •SerialInterfaces –4

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

TPC2190-QFNR

8-ChannelhighprecisionVoltageoutputDACwithinternalReference

Features •Highaccuraccy –INL:typical±1LSBat16-bitResolution •Integrated2.5VInternalReference –LowDrift:5ppm/℃ •Flexibleoutputconfiguration –UserselectableGain:1/2,1,2 –ResettoZeroScaleorMidscale •Highoutputcurrentcapability:20mA •SerialInterfaces –4

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

TPC2190-WLPR

8-ChannelhighprecisionVoltageoutputDACwithinternalReference

Features •Highaccuraccy –INL:typical±1LSBat16-bitResolution •Integrated2.5VInternalReference –LowDrift:5ppm/℃ •Flexibleoutputconfiguration –UserselectableGain:1/2,1,2 –ResettoZeroScaleorMidscale •Highoutputcurrentcapability:20mA •SerialInterfaces –4

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

TRC-2190

18-slotrackmountchassismanagedmediaconverters

moxaMOXA

台湾摩莎摩莎科技(上海)有限公司

TRC-2190-AC

18-slotrackmountchassismanagedmediaconverters

moxaMOXA

台湾摩莎摩莎科技(上海)有限公司

TSB2190

TimeDelayRelays/TSBSERIES

Description TheTSBSeriesisatotallysolid-state,delay-on-breaktiming module.TheTSBseriesisavailablewithafixed,external,or onboardadjustabletimedelay.Timedelaysfrom0.05to600 seconds,in4standardranges,coverover90ofallOEM andcommercialappliancetimingapplic

Littelfuselittelfuse

力特力特公司

TT2190

ColorTVHorizontalDeflectionOutputApplications

NPNTripleDiffusedPlanarSiliconTransistor Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

TT2190

SiliconNPNtransistorinaTO-220FPlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

TT2190LS

ColorTVHorizontalDeflectionOutputApplications

NPNTripleDiffusedPlanarSiliconTransistor Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

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