首页 >TF21844-TUH>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HALF-BRIDGEDRIVER | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER | IRF International Rectifier | IRF | ||
HALF-BRIDGEGATEDRIVERINSO-14 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HALF-BRIDGEGATEDRIVER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HALF-BRIDGEGATEDRIVERINSO-14 Features -FloatingHigh-SideDriverinBootstrapOperationto600V -DrivesTwoN-ChannelMOSFETsorIGBTsinHalfBridgeConfiguration -1.9ASource/2.3ASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients -ProgrammableDeadtimetoProtectMOSFETs -WideLow-SideGa | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HALF-BRIDGEDRIVER | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HALF-BRIDGEDRIVER Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
Gatedrivesupplyrangefrom10to20V Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL | IRF International Rectifier | IRF |
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