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AOB15S60	文件：348.86 Kbytes Page：6 Pages	600V15AaMOSpowerTransistor GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB15S60	文件：348.86 Kbytes Page：6 Pages	600V15AaMOSPowerTransistor GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB15S60	文件：298.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB15S60L	文件：298.03 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB15S60L	文件：348.86 Kbytes Page：6 Pages	600V15AaMOSPowerTransistor GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT15S60	文件：348.86 Kbytes Page：6 Pages	600V15AaMOSpowerTransistor GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT15S60	文件：348.86 Kbytes Page：6 Pages	600V15AaMOSPowerTransistor GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT15S60	文件：304.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT15S60L	文件：304.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOTF15S60	文件：348.86 Kbytes Page：6 Pages	600V15AaMOSPowerTransistor GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD

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