0.5mm PITCH Back-Flip Type

文件：255.89 Kbytes 页数：7 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

SOLID STATE GTR DRIVER MODULE

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：259.42 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOLID STATE GTR DRIVER MODULE (GTR DRIVER)

文件：256 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOLID STATE GTR DRIVER MODULE (GTR DRIVER)

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：258.06 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOLID STATE IGTB GATE DRIVER MODULE

TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TOSHIBA TF1205 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module circuit. Using this driver, you can design high reliability and compact system.

文件：244.25 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOLID STATE IGBT GATE DRIVER MODULE

TOSHIBS SOLID STATE IGBT GATE DRIVER MODULE TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability and compact system.

文件：234.45 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOLID STATE IGBT GATE DRIVER MODULE

TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE

文件：241.12 Kbytes 页数：5 Pages

TOSHIBA

东芝

SOLID STATE IGBT GATE DRIVER MODULE

TOSHIBS SOLID STATE IGBT GATE DRIVER MODULE TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability and compact system.

文件：231.99 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：1216YWWD；Package：DFN2X2-6L；P-Channel Enhancement Mode Power MOSFET

Description The TF1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -16A RDS(ON TYP) 12mΩ @ VGS=-4.

文件：3.43854 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

Standard Triac

General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants. This device may substitute

文件：1.52407 Mbytes 页数：6 Pages

APOLLOELECTRON

Apollo Electron Co., Ltd.