首页 >TF105B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1.0AFastRecoveryRectifier | TAITRON TAITRON Components Incorporated | TAITRON | ||
HIGHENERGYSPARKGAPDEVICES DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp | Clare Clare, Inc. | Clare | ||
SingleGang13AOutdoorRCDFusedSpur-Passive Features&Benefits AutomaticallydisconnectsbothLiveandNeutral connectionsleavingEarthconnectionintact. DualFlagTechnologyprovidesaddedprotection againsttherisksofelectrocution Contactsremainlatchedwhenpowersupply istemporarilylost MeetslatestIETwiringregulation | TIMEGUARD timeguard | TIMEGUARD | ||
GaAsIONIMPLANTEDPLANARTYPE HIGHSTABILITYMOTORCONTROL.ENERGYSAVINGFORCOOLINGFANMOTOR.DIGITALTACHOMETER.CRANKSHAFTPOSITIONSENSOR. FEATURES .ExcellentTemperatureCharacteristics. •WideOperatingTemperatureRangeCapabilitv, (;-55°C~+125°C) .ExcellentOutputVoltageLinearity. (;upto15kGausses) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Pulsetransformars | PREMOPREMO CORPORATION S.L 普莱默 | PREMO | ||
PlasticMedium?뭁owerComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PNPSILICONPOWERDARLINGTONTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A | POINN Power Innovations Ltd | POINN | ||
DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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