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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
30N50	文件：326.02 Kbytes Page：2 Pages	15TQ060	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FSW30N50C	文件：2.44579 Mbytes Page：7 Pages	THINKISEMI24A,500VN-CHANNELPLANARSTRIPEPOWERMOSFETs	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
IXFH30N50	文件：336.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH30N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin	IXYS IXYS Integrated Circuits Division	IXYS
IXFH30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFH30N50P	文件：336.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK30N50	文件：328.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK30N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Integrated Circuits Division	IXYS
IXFR30N50	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Integrated Circuits Division	IXYS
IXFR30N50	文件：329.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=160mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR30N50Q	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N50PS	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFX30N50	文件：367.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX30N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N50	文件：59.23 Kbytes Page：2 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •M	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N50	文件：380.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH30N50L	文件：148.68 Kbytes Page：5 Pages	N-ChannelEnhancementMode N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
鑫勃源（上海北京青岛）有限公司	TE30N50	MOTOROLA	23+	模块	18000		询价
深圳市昌和盛利电子有限公司	TE30N50E	场效应	23+	模块	3562		询价
深圳市毅创腾电子科技有限公司	TE30N50E	MOTOROLA	23+	模块	240	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
深圳市勤思达科技有限公司	TE30N50E	MOTOROLA	11+	mokuai	8000	全新原装,绝对正品现货供应	询价
深圳市壹芯创科技有限公司	TE30N50E	场效应	22+	模块	600	原装现货库存.价格优势	询价
中天科工半导体（深圳）有限公司	TE30N50E	ON	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
瀚佳科技(深圳)有限公司	TE30N50E	ON	16+	SOT227	2100	公司大量全新现货随时可以发货	询价
深圳市亿智腾科技有限公司	TE30N50E	MOTOROLA	2021+	模块	6430	原装现货/欢迎来电咨询	询价
深圳市亚泰盈科电子有限公司	TE30N50E	MOTOROLA		模块	256	原装原装原装只做原装现货	询价
深圳市大联智电子有限公司	TE30N50E	NXP	2022+	TSSOP	7300	原装现货	询价

更多TE30N50供应商更新时间2024-5-16 18:37:00

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