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型号	下载订购	功能描述	制造商上传企业	LOGO
TE28F160C3	文件：177.81 Kbytes Page：18 Pages	3 Volt Intel Advanced Boot Block Flash Memory Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit 文件：177.81 Kbytes 页数：18 Pages	Intel 英特尔	Intel
TE28F160C3	文件：300 bytes Page：1 Pages	3 Volt Intel Advanced Boot Block Flash Memory	Intel 英特尔	Intel
TE28F160C3B110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	Intel 英特尔	Intel
TE28F160C3B90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	Intel 英特尔	Intel
TE28F160C3BA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F160C3BA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F160C3BA90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F160C3BC70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F160C3BC80	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F160C3BC90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel

技术参数

存储器格式：
闪存
技术：
FLASH - 引导块
存储容量：
16Mb （1M x 16）
写周期时间 - 字，页：
70ns
访问时间：
70ns
存储器接口：
并联
电压 - 电源：
2.7V ~ 3.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
48-TFSOP（0.724\，18.40mm 宽）
供应商器件封装：
48-TSOP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	TE28F160C3BA90	INT	24+/25+		22	原装正品现货库存价优	询价
深圳市勤思达科技有限公司	TE28F160C3TD70	INTEL	09+	TSOP	5500	原装无铅,优势热卖	询价
深圳市毅创腾电子科技有限公司	TE28F160C3BD110	INTEL	23+	TSOP/48	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市益百分电子有限公司	TE28F160C3BD70	INTEL	TSOP48		252	全新原装进口自己库存优势	询价
深圳市星佑电子有限公司	TE28F160C3BA90	INTEL	0510/0420	TSOP	3300	全新原装现货绝对自己公司特价库	询价
深圳市恒创达实业有限公司	TE28F160C3TA90	INTEL	17+	TSOP	6200	100%原装正品现货	询价
深圳市弘为电子有限公司	TE28F160C3BD70	INTEL	24+	TSSOP	3867	原装现货假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	TE28F160C3TD70	INTEL	25+	TSSOP	18000	原厂直接发货进口原装	询价
深圳市富诚威科技有限公司	TE28F160C3BD70	INTER	25+		5000	十年品牌!原装现货!!!	询价
深圳市一线半导体有限公司	TE28F160C3BA90		24+	SMD48	200	真实现货库存	询价

更多TE28F160C3供应商更新时间2025-10-7 14:30:00

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