首页 >TDA9935HW>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RS232/423LowCap,#24-10c,FPE,O/AFoilBraid,PVCJkt,CM ProductDescription ComputerEIARS-232/423Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,overallBeldfoil®(100coverage)+tinned copperbraidshield(65coverage),drainwire,PVCjacket. | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
DualP-ChannelEnhancementModeMOSFET Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,6.0A,RDS(ON)=36mW@VGS=10V. RDS(ON)=42mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=75mW@VGS=2.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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