首页 >TDA8178FS-KIT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TVVERTICALDEFLECTIONBOOSTER DESCRIPTION DesignedformonitorsandhighperformanceTVs,theTDA8178Sverticaldeflectionboosterdeliversflybackvoltagesupto90V.TheTDA8178Soperateswithsuppliesupto42Vandprovidesupto2Appoutputcurrenttodrivetoyoke.TheTDA8178SisofferedinHEPTAWATTpackage .POW | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Lowcurrentconsumption:ICC=1.9mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Excellentisolation:ISL=39dBTYP.@f=1.0GHz ISL=40dBTYP.@f=1.9GHz ISL=38dBTYP.@f=2.4GHz •Powergain:GP=11.0dBTYP.@f=1.0GHz GP=11.5dBTYP.@ | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SILICONRFICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Lowcurrentconsumption:ICC=1.9mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Excellentisolation:ISL=40dBTYP.@f=1.0GHz ISL=41dBTYP.@f=1.9GHz ISL=42dBTYP.@f=2.4GHz •Powergain:GP=11.0dBTYP.@f=1.0GHz GP=11.0dBTYP.@ | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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