首页 >TDA8061>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
.1-3.5GHzLowNoiseAmplifier Description TheTriQuintTGA8061-SCCisaGaAsmonolithiclownoiseamplifierintendedforuseasauniversalgainblockinapplicationsrequiringsimultaneousflatgain,lownoisefigure,andlowSWRoveraverywidebandwidth.ThreeFETstageswithresistivefeedbackmaintainhighlyrepeatable | TriQuint TriQuint Semiconductor | TriQuint | ||
.1-3.5GHzLowNoiseAmplifier Description TheTriQuintTGA8061-SCCisaGaAsmonolithiclownoiseamplifierintendedforuseasauniversalgainblockinapplicationsrequiringsimultaneousflatgain,lownoisefigure,andlowSWRoveraverywidebandwidth.ThreeFETstageswithresistivefeedbackmaintainhighlyrepeatable | TriQuint TriQuint Semiconductor | TriQuint | ||
VoltageRegulatorwithintegratedLINTransceiver GeneralDescription TheTH8061consistsofalow-dropvoltageregulator5V/50mAandaLINbustransceiver.TheLINtransceiverissuitableforLINbussystemsconformtoLINspecificationrevision1.3,2.0andSAEJ2602. Thecombinationofvoltageregulatorandbustransceivermakesitpossible | MelexisMelexis Microelectronic Systems 迈来芯 | Melexis | ||
VoltageRegulatorwithintegratedLINTransceiver GeneralDescription TheTH8061consistsofalow-dropvoltageregulator5V/50mAandaLINbustransceiver.TheLINtransceiverissuitableforLINbussystemsconformtoLINspecificationrevision1.3,2.0andSAEJ2602. Thecombinationofvoltageregulatorandbustransceivermakesitpossible | MelexisMelexis Microelectronic Systems 迈来芯 | Melexis | ||
SiliconN-ChannelMOSType(U-MOS??H) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFETsSiliconN-ChannelMOS(U-MOS-H) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
2.5Gb/s16-BitMultiplexer/DemultiplexerChipset FunctionalDescription TheVSC8061andVSC8062arehigh-speedinterfacedevicescapableofdataratesupto2.5Gb/s.The devicesarefabricatedingalliumarsenideusingtheVitesseH-GaAsE/DMESFETprocesstoachievehighspeedandlowpowerdissipation.Foreaseofsystemdesignusingthesep | VITESSE Vitesse Semiconductor Corporation | VITESSE |
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