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PHPT60606NY

60V,6ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. PNPcomplement:PHPT60606PY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrinted

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT60606NY-Q

60V,6ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60606PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT60606PY

60V,6APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. NPNcomplement:PHPT60606NY. 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •Re

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT60606PY-Q

60V,6APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60606NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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