首页 >TDA2790>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CrystalUnitSMD3.2x2.525.00MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforcustomerforus | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
TELEFUNKELECTRONICCREATIVETECHNOLOGIENU2200B-FP TELEFUNKELECTRONICCREATIVETECHNOLOGIENU2200B-FP | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
1000-MHzQuadratureModulator | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
SupplyVoltage5V(Typically) | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
1000-MHzQUADRATUREMODULATOR | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
SupplyVoltage5V(Typically) | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
1000-MHzQuadratureModulator | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
SWITCHINGN-ANDP-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2790GRisN-andP-channelMOSFieldEffect TransistorsdesignedforMotorDriveapplication. FEATURES •Lowon-stateresistance N-channelRDS(on)1=28mΩMAX.(VGS=10V,ID=3A) RDS(on)2=40mΩMAX.(VGS=4.5V,ID=3A) P-channelRDS(on)1=60mΩMAX.(VGS=−1 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-ANDP-CHANNELPOWERMOSFET DESCRIPTION TheµPA2790GRisN-andP-channelMOSFieldEffectTransistorsdesignedforMotorDriveapplication. FEATURES •Lowon-stateresistance N-channelRDS(on)1=28mΩMAX.(VGS=10V,ID=3A) RDS(on)2=40mΩMAX.(VGS=4.5V,ID=3A) P-channel | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
