首页 >TDA2658Q>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HC49SMD30MHzCrystalUnit Features: GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •LoadSwitchinHighCurrentApplications •DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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