TZ2658A

HC49SMD30MHzCrystalUnit

Features: GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices

VB2658

P-Channel60-V(D-S)MOSFET

VB2658

P-Channel60-V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

VBA2658

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBA2658

P-Channel60V(D-S)175째CMOSFET

VBE2658

P-Channel60V(D-S)MOSFET

VBFB2658

P-Channel60V(D-S)MOSFET

VBI2658

P-Channel60-V(D-S)MOSFET

VBJ2658

P-Channel60-V(D-S)MOSFET

VBL2658

P-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •LoadSwitchinHighCurrentApplications •DC/DCConverters