首页 >TDA2640Q>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelEnhancement-ModeVerticalDMOSFET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
N-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | SUTEX |
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