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TGA2502

13-15GHz4WPowerAmplifier

KeyFeatures •0.5umpHEMTTechnology •>25dBNominalGain •>36dBmNominalPsat •44dBmNominalIP3@14GHz •Bias7V@1.3AIdq,2.1AunderRFdrive •ChipDimensions2.5mmx2.7mmx0.1mm PrimaryApplications •Ku-BandVSATTransmit

TriQuint

TriQuint Semiconductor

TGA2502

1315GHz4WPowerAmplifier

TriQuint

TriQuint Semiconductor

TMBF2502

SINGLEPHASE2.5AMPS.GLASSPASSIVATEDBRIDGERECTIFIERS

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

TP2502

P-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TP2502

P-ChannelEnhancementModeVerticalDMOSFETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinput

SUTEX

Supertex, Inc

TP2502

P-ChannelEnhancement-ModeVerticalDMOSFETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)powertransistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwith

SUTEX

Supertex, Inc

TP2502ND

P-ChannelEnhancement-ModeVerticalDMOSFETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)powertransistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwith

SUTEX

Supertex, Inc

TPH2502

250MHz,Precision,Rail-to-RailI/O,CMOSOp-amps

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

TPH2502-SR

250MHz,Precision,Rail-to-RailI/O,CMOSOp-amps

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

TPH2502-VR

250MHz,Precision,Rail-to-RailI/O,CMOSOp-amps

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

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