首页 >TDA1870N>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDVOLTAGECONTROLLEDOSCILLATOR(12.8X12.8X4.0MM) FEATURES WIDEFREQUENCYRANGEVCO LOWPHASENOISE FASTDELIVERY/LOWCOST CUSTOMFREQUENCYRANGEAVAILABLE-CONTACTSALES@TRANSKO.COM | Transko Transko Electronics, Inc. | Transko | ||
BlueNRG-MSdevelopmentkits | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA1870isaswitchingdevicewhichcanbe drivendirectlybya2.5-Vpowersource. TheμPA1870featuresalowon-stateresistanceand excellentswitchingcharacteristics,andissuitablefor applicationssuchaspowerswitchofportablemachine andsoon. FEATURES •Canbe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1870isaswitchingdevicewhichcanbedrivendirectlybya2.5-Vpowersource. TheµPA1870featuresalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbedri | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA1870Bisaswitchingdevicewhichcanbedriven directlybya2.5Vpowersource. TheμPA1870Bfeaturesalowon-stateresistanceand excellentswitchingcharacteristics,andissuitablefor applicationssuchaspowerswitchofportablemachineand soon. FEATURES •2.5 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1870Bisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. TheµPA1870Bfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •2.5Vdr | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
DualN-ChannelMOSFET FEATURES •Halogen-freeOptionAvailable •TrenchFET®PowerMOSFETs | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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