首页 >TDA1790>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Voltage-ControlledOscillatorSurfaceMountModule | ZCOMM Z-Communications, Inc | ZCOMM | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •Dualchiptype •Lowon-stateresistance N-ChannelRDS(on)1=0.12ΩTYP.(VGS=10V,ID=0.5A) RDS(on)2=0.19ΩTYP.(VGS=4V,ID=0.5A) P-ChannelRDS(on)1=0.45ΩTYP.(VGS=–10V,ID=–0.35A) RDS(on)2=0.74ΩTYP.(VGS=–4V,ID=–0.35A) •Lowinputcapacitance | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-ANDP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisN-andP-ChannelMOSFieldEffectTransistordesignedformotordriverapplications. FEATURES •Dualchiptype •Lowon-resistance N-ChannelRDS(on)1=0.12ΩTYP.(VGS=10V,ID=0.5A) RDS(on)2=0.19ΩTYP.(VGS=4V,ID=0.5A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SWITCHINGN-ANDP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisN-andP-ChannelMOSFieldEffectTransistordesignedformotordriverapplications. FEATURES •Dualchiptype •Lowon-resistance N-ChannelRDS(on)1=0.12ΩTYP.(VGS=10V,ID=0.5A) RDS(on)2=0.19ΩTYP.(VGS=4V,ID=0.5A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •Dualchiptype •Lowon-stateresistance N-ChannelRDS(on)1=0.12ΩTYP.(VGS=10V,ID=0.5A) RDS(on)2=0.19ΩTYP.(VGS=4V,ID=0.5A) P-ChannelRDS(on)1=0.45ΩTYP.(VGS=–10V,ID=–0.35A) RDS(on)2=0.74ΩTYP.(VGS=–4V,ID=–0.35A) •Lowinputcapacitance | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
L-BandPassiveLimiter | CPICommunications & Power Industries, Inc. Cpi | CPI | ||
UltrabrightLED,첩5mmUntintedNon-Diffused | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC |
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