首页 >TCD2709DGDZ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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CrystalUnitSMD3.2x2.520.945MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforcustomerforuseinwirelesscommunications devices,espec | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
DUALHIGH-SPEEDFETDRIVER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALHIGH-SPEEDFETDRIVER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DUALHIGH-SPEEDFETDRIVER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DUALHIGH-SPEEDFETDRIVER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2709AGRisN-channelMOSFieldEffect TransistordesignedforDC/DCconverterandpower managementapplicationsofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=7.0A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=7.0A) •Lo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2709GRisN-channelMOSFieldEffectTransistor designedforDC/DCconverterandpowermanagement applicationsofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=7.0A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=7.0A) •Low | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
2.5GHzSILICONMMICWIDE-BANDAMPLIFIER DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER DESCRIPTION TheµPC2709TBisasiliconmonolithicintegratedcircuitsdesignedas1stIFamplifierforDBStuners.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. TheµPC2709TBhascompatiblepinconnectionsandperformancetoµPC2709Tofconventionalm | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VCC=4.5to5.5V •Widebandresponse:fu=2.3GHzTYP.@3dBbandwidth •Mediumoutputpower:PO(sat)=+11.5dBm@f=1GHzwithexternalinductor •Powergain:GP=23dBTYP.@f=1GHz •Portimpedance:input/output50W | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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