首页 >TC9410BFP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS9410VBisahighpowerinfrared,940nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS9410VBisahighpowerinfrared,940nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Specificationfora5.125GHzC-BandBandpassCavityFilter | MTRONPTI mtronpti | MTRONPTI | ||
SurfaceMountN-ChannelEnhancementModeMOSFET | WEITRON Weitron Technology | WEITRON | ||
LowNoise/LowPower/SPIBus FEATURES •Twopotentiometersperpackage •SPIserialinterface •Registerorientedformat -Directread/write/transferwiperpositions -Storeasmanyasfourpositionsper potentiometer •Powersupplies -VCC=2.7Vto5.5V -V+=2.7Vto5.5V -V-=-2.7Vto-5.5V •LowpowerCMOS | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
