首页 >TC6428EOA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
18(19/30)AWGTinnedCopper | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
30VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor Description TheACE6428BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.ThisdeviceissuitableforuseasahighsideswitchinSMPSandgeneralpurposeapplications. Features •VDS(V)=30V •ID=43A(VGS=10V) •RDS(ON) | ACE ACE Technology Co., LTD. | ACE | ||
N-ChannelEnhancementModeFieldEffectTransistor | ACE ACE Technology Co., LTD. | ACE | ||
30VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
Single-PhaseFull-WaveMotorDriverforFanMotor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Singlephasefull-wavedriverICforfanmotor | LSI LSI Computer Systems | LSI | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.1A,RDS(ON)=68mΩ@VGS=10V. RDS(ON)=86mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.1A,RDS(ON)=68mW@VGS=10V. RDS(ON)=86mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModePowerMOSFET GENERALFEATURES *Vos=B0VIo=6A +Rosin | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC |
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