TC58FVM7B2AFT65

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION TheTC58FVM7T2A/B2Aisa134217728-bit,3.0-Vread-onlyelectricallyerasableandprogrammableflash memoryorganizedas16777216×8bitsoras8388608×16bits.TheTC58FVM7T2A/B2Afeaturescommandsfor Read,ProgramandEraseoperationstoalloweasyinterfacingwithmicroproces

TC58FVM7B2AFT80

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION TheTC58FVM7T2A/B2Aisa134217728-bit,3.0-Vread-onlyelectricallyerasableandprogrammableflash memoryorganizedas16777216×8bitsoras8388608×16bits.TheTC58FVM7T2A/B2Afeaturescommandsfor Read,ProgramandEraseoperationstoalloweasyinterfacingwithmicroproces

TC58FVM7T2AFT65

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION TheTC58FVM7T2A/B2Aisa134217728-bit,3.0-Vread-onlyelectricallyerasableandprogrammableflash memoryorganizedas16777216×8bitsoras8388608×16bits.TheTC58FVM7T2A/B2Afeaturescommandsfor Read,ProgramandEraseoperationstoalloweasyinterfacingwithmicroproces

TC58FVM7T2AFT80

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION TheTC58FVM7T2A/B2Aisa134217728-bit,3.0-Vread-onlyelectricallyerasableandprogrammableflash memoryorganizedas16777216×8bitsoras8388608×16bits.TheTC58FVM7T2A/B2Afeaturescommandsfor Read,ProgramandEraseoperationstoalloweasyinterfacingwithmicroproces

TC58FV321

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY

TC58FVB004

4M (512K x 8) BIT CMOS FLASH MEMORY

TC58FVB004FT-10

4M (512K x 8) BIT CMOS FLASH MEMORY

TC58FVB004FT-12

4M (512K x 8) BIT CMOS FLASH MEMORY

TC58FVB004FT-85

4M (512K x 8) BIT CMOS FLASH MEMORY

TC58FVB160

16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY