首页 >TC514256BJ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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256Kx4-BitDynamicRAMLowPower256Kx4-BitDynamicRAM TheHYB514256B/BJ/BL/BJListhenewgenerationdynamicRAMorganizedas262144wordsby4-bit.TheHYB514256B/BJ/BL/BJLutilizesCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandforthesystemuser.Multiplexedad | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
262,144-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM514256C/CLisa262,144-wordx4-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM514256C/CLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetal | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
CMOS256Kx4bitDynamicRAM [NipponSteelSemiCorp] FastPageModeCMOS256kx4bitDynamicRAM | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
CMOS256Kx4bitDynamicRAM [NipponSteelSemiCorp] FastPageModeCMOS256kx4bitDynamicRAM | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
262,144WORDx4BITDYNAMICRAM DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
262,144WORDx4BITDYNAMICRAM DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
262,144WORDx4BITDYNAMICRAM DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
262,144WORDSX4BITDYNAMICRAM DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
262,144WORDSX4BITDYNAMICRAM DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
262,144WORDSX4BITDYNAMICRAM DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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