TC511664BJ中文资料东芝数据手册PDF规格书

DESCRIPTION

The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC511664BJ/BZ to be packaged in a standard 40 pin plastic SOJ and 40 pin plastic ZIP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V ±10 tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.