TC5116400J中文资料东芝数据手册PDF规格书

DESCRIPTION

The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The

TC5116400J/FT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit

techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs

permit the TC5116400J/FT to be packaged in a 28/24 pin plastic SOJ, and 28/24 pin plastic TSOP. The package

size provides high system bit densities and is compatible with widely available automated testing and insertion

equipment. System oriented features include single power supply of 5V± 10 tolerance, direct interfacing

capability with high performance logic families such as Schottky TTL.

FEATURES

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4,194,304 word by 4 bit organization

Fast access time and cycle time

Single power supply of 5V± 10 with a built-

in VBB generator

Low Power

495mW MAX.Operating

(TCS116400J/FT-60)

440mW MAX. Operating

(TC5116400J/FT-70)

5.5mW MAX. Standby

Outputs unlatched at cycle end allows two-di-

mensional chip selection

Read-Modify-Write, CAS before RAS refresh,

RAS-only refresh, Hidden refresh, Fast Page

Mode and Test Mode capability

All inputs and outputs TTL compatible

4096 refresh cycles/64ms

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• Package TC5116400JSO128-P-400A

TC5116400FT: TSOP28-P-400B