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35102

22(7/30)AWGTinnedCopper

ALPHAWIREAlpha Wire

阿尔法电线

M35102

MemoryMicromodulesGeneralInformationforD1,D2andCPackaging

DESCRIPTION MemoryCardsconsistoftwomainparts:theplasticcard,andtheembeddedMicromodule(which,inturn,carriesthesiliconchip). ■Micromodulesweredevelopedspecificallyfor embeddinginSmartcardsandMemoryCards ■TheMicromoduleprovides: –Supportforthechi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M35102

ContactlessMemoryChipwith64-bitUniqueSerialID13.56MHz,2048-bitHighEnduranceEEPROM

DESCRIPTION TheM35102isacontactlessmemory,poweredbythereceivedcarrierelectromagneticwave.Itisa1792-bitEEPROM,plus256-bitROM,organisedas16pagesof16x8bits. ■ISO14443-2Type-BStandardCompliant ■13.56MHzCarrierFrequency ■847kHzSubcarrierFrequency ■106Kbi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MAX35102

Time-to-DigitalConverterWithoutRTC

MaximMaxim Integrated Products

美信美信半导体

MAX35102ETJ+

Time-to-DigitalConverterWithoutRTC

MaximMaxim Integrated Products

美信美信半导体

MAX35102ETJ+T

Time-to-DigitalConverterWithoutRTC

MaximMaxim Integrated Products

美信美信半导体

RD35102K

RADIALLEADEDINDUCTORS

ABCO

ABCO ELECTRONICS CO.LTD

REF35102

REF35UltraLow-Power,High-PrecisionVoltageReference

TITexas Instruments

德州仪器美国德州仪器公司

REF35102QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features •Ultra-lowquiescentcurrent: –650nA(typical) •Initialaccuracy:±0.05(maximum) •Temperaturecoefficient: –12ppm/°C(maximumfor−40°Cto105°C) •Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P •NRpintoreducenoise •ENpintoreduceshutdowncurrentconsumption •

TI1Texas Instruments

德州仪器美国德州仪器公司

REF35102QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features •Ultra-lowquiescentcurrent: –650nA(typical) •Initialaccuracy:±0.05(maximum) •Temperaturecoefficient: –12ppm/°C(maximumfor−40°Cto105°C) •Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P •NRpintoreducenoise •ENpintoreduceshutdowncurrentconsumption •

TITexas Instruments

德州仪器美国德州仪器公司

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