首页 >TC2N4401>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SMALLSIGNALTRANSISTORSNPN FEATURES ♦NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,thePNPtransistor2N4403isrecommended. ♦Onspecialrequest,thistransistorisalsomanufacturedinthepinconfigurationTO-18. ♦Thistransistorisalsoavailable | GE GE Industrial Company | GE | ||
NPNGeneralPurposeAmplifier Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNMediumPowerTransistor •Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT4403/SST4403/MMST4403/PN4403. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
NPNEXPITAXIALSILICONTRANSISTOR GeneralPurposeTransistor CollectorEmitterVoltage:VCEO=40V CollectorDissiption:Pc(max)=625mW | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaTO-92;SOT54plasticpackage.PNPcomplement:2N4403. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Industrialandconsumerswitchingapplications. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TO-92Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
Si-EpitaxialPlanarTransistors Si-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
NPNSILICONPLANAREPITAXIALTRANSISTOR NPNSILICONPLANAREPITAXIALTRANSISTOR | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
GeneralPurposeTransistorsNPNSilicon | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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