25A GLASS PASSIVATED AVALANCHE 5/16 TIN CAN PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 200nA

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WTE

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Ku-Band Power Amplifier

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TriQuint

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QORVO

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N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

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SUTEX