500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes

文件：75.71 Kbytes 页数：2 Pages

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌电子德昌电子（集团）有限公司

500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes

文件：92.35 Kbytes 页数：3 Pages

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌电子德昌电子（集团）有限公司

N-Channel 650 V (D-S) MOSFET

文件：1.08791 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

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TSC

台湾半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体