TC1401资料datasheet下载市场行情全讯科技-114ic电子网

首页 >TC1401>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
TC1401	文件：159.63 Kbytes Page：4 Pages	0.5 W High Linearity and High Efficiency GaAs Power FETs DESCRIPTION The TC1401 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is with via-hole processes to reduce the thermal resistance and grounding inductance. The short gate length enables the device to be used i 文件：159.63 Kbytes 页数：4 Pages	TRANSCOM 全讯科技	TRANSCOM
TC1401	文件：300 bytes Page：1 Pages	FET Chip	Transcom 全讯科技	Transcom
TC1401N	文件：175.97 Kbytes Page：5 Pages	0.5 W High Linearity and High Efficiency GaAs Power FETs DESCRIPTION The TC1401N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device has no via holes in the source pads. The short gate length characteristic enables the device to be used in a circuit up to 20GHz. All dev 文件：175.97 Kbytes 页数：5 Pages	TRANSCOM 全讯科技	TRANSCOM
TC1401N	文件：300 bytes Page：1 Pages	FET Chip	Transcom 全讯科技	Transcom

更多TC1401供应商更新时间2025-10-4 9:29:00