首页 >TB6609FTG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LANDISCRETETRANSFORMERMODULES LANFILTEREDCONNECTORS LANGIGABITICCROSSREFERENCE LAN10/100BASE-TXICCROSSREFERENCE LAN10BASE-TICCROSSREFERENCE | pulse Pulse A Technitrol Company | pulse | ||
SelectingtheBestJFETforYourApplication | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DCMotorForward/ReverseDualSpeedElectronicGovernors ■Overview TheAN6608,theAN6609NandtheAN6609NSaretheelectronicgovernorswhichincorporatetheforward/reverserotationanddoublespeedcontrolsoftheDC-motorsusedforradio/cassettetaperecorder,andthefunctionssuchasfastforward,rewind,brake,andpause.Theyarealsoavailab | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
DCMotorForward/ReverseDualSpeedElectronicGovernors ■Overview TheAN6608,theAN6609NandtheAN6609NSaretheelectronicgovernorswhichincorporatetheforward/reverserotationanddoublespeedcontrolsoftheDC-motorsusedforradio/cassettetaperecorder,andthefunctionssuchasfastforward,rewind,brake,andpause.Theyarealsoavailab | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
SpindleMotorDriverforCD/MD | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
P-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •–6.3A,–30V.RDS(ON)=0.032Ω@VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
PowerMOSFET Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRF International Rectifier | IRF | ||
LowConductionLosses Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRF International Rectifier | IRF |
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