首页 >TB6500HQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
5Vmixer/oscillatorandsynthesizerforPALandNTSCstandards | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
5Vmixer/oscillatorandsynthesizerforPALandNTSCstandards | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
5Vmixer/oscillatorandsynthesizerforPALandNTSCstandards | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
2.7-5.5VFastInfraredTransceiverModuleFamily | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
2.7-5.5VFastInfraredTransceiverModuleFamily | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EN50155FullGigabitEthernetswitcheswithupto8PoEports | moxaMOXA 台湾摩莎摩莎科技（上海）有限公司 | moxa | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs Description TheTSHA650.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Incontras | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA6500isaninfrared,875nmemittingdiodein GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:p=875nm •Highreliability •Angleofhalfintensity: | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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