首页 >TB6086FTG>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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ESDWristStrapTester | POMONA Pomona Electronics | POMONA | ||
DesignConsiderationforInterleavedBoundaryConductionModePFC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
13LEDsALC*FlashandIllumination | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
X-RayCCDCamera TheC6086seriesisacompact,lightweight,highresolutionX-rayCCDcamera.ItconsistsofanX-raysensitivescintillator(P43)coatedonataperedfiberopticbundledirectcoupledtoaCCDcamera.TheC6086-90cameracontrollerincorporatesa10-bitA/Dconverterforpreciseimageacquisition | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | HAMAMATSU | ||
BROADBAND:RF&WIRELESS RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal | pulse Pulse A Technitrol Company | pulse | ||
DIPLEXERSFORCABLEMODEMS,SETTOPBOXESANDGATEWAYS RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal | pulse Pulse A Technitrol Company | pulse | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=70A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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