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TA8126S

DC/DCCONVERTERFORELECTRICTUNING(3VUSE)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8126

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8126

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TPC8126

LithiumIonBatteryApplicationsPowerManagementSwitchApplications

LithiumIonBatteryApplicationsPowerManagementSwitchApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=7.5mΩ(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhancementmode:Vth=−0.8to−2.0V(VDS=−10V,

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

UPC8126GR

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Directmodulationrange:915MHzto960MHz •Pre-mixerforRFandIFlocaloscillatorisincorporated. •Externallocalfiltercanbeappliedbetweenpre-mixeroutputandmodulatorinputport. •Lowoperationcurrent:ICC=35mA(typ.)@VCC=3V •Equippedwithpowersavefunc

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC8126GR

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8126GR

900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8126GR

SingleChipTransceiverSiliconMMICforPHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8126GR

UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8126GR

RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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