首页 >TA8119D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STEREOHEADPHONEAMPLIFIER(3VUSE) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSV) Lithium-IonBatteryApplications LoadswitchApplications NotebookPCApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=10mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=24S(typ.) •Lowleakagecurrent:IDSS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
-15dBmINPUT,VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NECsVARIABLEGAINAMPLIFIER | CEL California Eastern Labs | CEL | ||
1.9GHzAGCAMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LINERINTERFRATEDCIRCUIT | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
POWERZENERS DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES •HighSurgeRatings •AQuartertheSizeofConventional1WattZeners •ImpervioustoMoisture | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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