首页 >TA8110F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SmartMultichannelLowSideSwitchwithParallelControlandSPIInterface | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Overvoltage,Overtemperature,ESD-Protection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SmartMultichannelLowSideSwitchwithParallelControlandSPIInterface | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
P-Channel40V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •POL | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=17mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=16S(typ.) •Lowleakagecurrent:IDSS=−10µA(ma | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
3.3V/1310nm/4.25GbpsSFFLCSINGLE-MODETRANSCEIVER | OPTOWAY Optoway Technology Inc | OPTOWAY | ||
3.3V/1310nm/4.25GbpsDigitalDiagnosticLCSFPSINGLE-MODETRANSCEIVER | OPTOWAY Optoway Technology Inc | OPTOWAY | ||
3.3V/1310nm/4.25GbpsSFFLCSINGLE-MODETRANSCEIVER | OPTOWAY Optoway Technology Inc | OPTOWAY |
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