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TA2609A

SAW Filter 869 MHz (BW 2MHz) SMD 3X3 mm

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

2609B

2609BBroadbandPhotodiodeModule

Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro

agere

杰尔

2609B

BroadbandPhotodiodeModule

The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic

EMCORE

Emcore Corporation

2609C

2609CBroadbandPhotodiodeModule

Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

agere

杰尔

AP2609GY-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP2609GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

CEC2609

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2609

DualEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEH2609A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FKN2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

FKUC2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKUC2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKUC2609meetstheRoHSandGreen Productrequirementwithfullfunctionreliability approved.

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

IRS2609DSPBF

HALF-BRIDGEDRIVER

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRS2609DSPBF

HALF-BRIDGEDRIVER

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRS2609DSPBF

HALF-BRIDGEDRIVER

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRS2609DSTRPbF

HALF-BRIDGEDRIVER

IRFInternational Rectifier

英飞凌英飞凌科技公司

KSC2609A

AudioFrequencyHighFrequencyPowerAmplifier

AudioFrequency HighFrequencyPowerAmplifier •ComplementtoKSA1220/KSA1220A

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

LM2609

NandP-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LTC2609

Quad16-/14-/12-BitRail-to-RailDACswithI2CInterface

LINERLinear Technology

线性技术公司

LTC2609CGN

Quad16-/14-/12-BitRail-to-RailDACswithI2CInterface

LINERLinear Technology

线性技术公司

LTC2609CGNPBF

Quad16-/14-/12-BitRail-to-RailDACswithI2CInterface

LINERLinear Technology

线性技术公司

供应商型号品牌批号封装库存备注价格
TST
23+
35375
华南总代
询价
23+
N/A
65700
一级代理放心采购
询价
TST
23+
SMD
56000
TST全系列在售,支持实单
询价
更多TA2609A供应商 更新时间2024-6-15 9:18:00