首页 >TA100N055P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ElectricallyIsolatedBackSurface TrenchPowerMOSFETISOPLUS220™ ElectricallyIsolatedBackSurface Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •TrenchMOSFET -verylowRDS(on) -fastswitching -usableintr | IXYS IXYS Corporation | IXYS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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