首页 >TA-ITECH1911>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2to4PhasePWMExtenderforMultiphaseSynchronousBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
2to4PhasePWMExtenderforMultiphaseSynchronousBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1911isaswitchingdevicewhichcanbedrivendirectlybya2.5-Vpowersource. TheµPA1911featuresalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbedri | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA1911isaswitchingdevicewhichcanbedriven directlybya2.5-Vpowersource. TheμPA1911featuresalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuch aspowerswitchofportablemachineandsoon. FEATURES •Canbe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
OldCompanyNameinCatalogsandOtherDocuments DESCRIPTION TheµPA1911Aisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. TheµPA1911Afeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbed | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1911Aisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. TheµPA1911Afeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbed | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1911Aisaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. TheµPA1911Afeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbed | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA1911isaswitchingdevicewhichcanbedriven directlybya2.5-Vpowersource. TheμPA1911featuresalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuch aspowerswitchofportablemachineandsoon. FEATURES •Canbe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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