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MTD5N05

PowerFieldEffectTransistors

PowerFieldEffectTransistors N-ChannelEnhancementModeSiliconGate DPAKforSurfaceMountorInsertionMount

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTD5N05D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTD5N05I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP5N05

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP5N05

N-CHANNELENHANCEMENTMODESILICONGATE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SSM5N05FU

HighSpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM5N05FU

TOSHIBAFIELDEFFECTTRANSISTORSILICONNCHANNELMOSTYPE

HighSpeedSwitchingApplications •Smallpackage •Lowonresistance:Ron=0.8Ω(max)(@VGS=4V) :Ron=1.2Ω(max)(@VGS=2.5V) •Lowgatethresholdvoltage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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