AOB29S50

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=29A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) •100avalanchetested •MinimumLot-to-

AOB29S50

500V29AaMOSPowerTransistor

GeneralDescription TheAOT29S50&AOB29S50&AOTF29S50havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOK29S50

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=29A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) •100avalanchetested •MinimumLot-to-

T30-P-A3

NVIDIA
BGA

T322B474J050AS

KEMET/基美
Axial

KEMET/基美