首页 >T28F010A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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1024K(128Kx8)CMOSFLASHMEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation 英特尔 | Intel | ||
1024K(128Kx8)CMOSFLASHMEMORY | IntelIntel Corporation 英特尔 | Intel | ||
1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 | AMD | ||
1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms GENERALDESCRIPTION TheAm28F010Aisa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedt | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 | AMD | ||
1MegabitCMOSFlashMemory | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1MegabitCMOSFlashMemory | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1MegabitCMOSFlashMemory | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1MegabitCMOSFlashMemory | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1MegabitCMOSFlashMemory DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fast | Catalyst Catalyst Semiconductor | Catalyst | ||
1MegabitCMOSFlashMemory DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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