首页 >T25N06BOC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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60VN-ChannelPowerMosfet GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=60V,ID=25A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwit | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
60VN-ChannelPowerMosfet Features VDS=60V,ID=25A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwitching LowONResistance(Rdson≤29mΩ) LowGateCharge LowReversetransfercapacitances 100SinglePulseavalancheenergyTest | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
25A,60VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching •FEATURES •DrainCurrentID=25A@TC=25℃ •DrainSourceVoltage :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.065Ω(Max) •FastSwitching •APPLICATIONS •Switchingregulators •Switchingconverters,motordrivers,relaydrivers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR DESCRIPTION TheUTC25N06isanN-channelenhancementmodepowerMOSFET,whichprovideslowgatecharge,avalancheruggedtechnology,andsoon. TheUTC25N06isuniversallyappliedinDC-DC&DC-ACconverters,motorcontrol,highcurrent,highspeedswitching,solenoidandrelaydrivers,re | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N-ChannelEnhancementModePowerMOSFET Description TheG25N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Powerswitchingapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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