首页 >T1458>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SAWFilter954.50MHz | GOLLEDGE Golledge Electronics Ltd | GOLLEDGE | ||
SAWFilter954.5MHz | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SMD2.5x2.026.0MHzCrystalUnit Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
CrystalUnitSMD2.5x2.026.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheµPA1458isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorberand4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES •SurgeAbsorber(C-B)builtin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlin | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES •SurgeAbsorber(C-B)builtin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlingtonTransistor. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES •SurgeAbsorber(C-B)builtin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlingtonTransistor. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheµPA1458isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorberand4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES •SurgeAbsorber(C-B)builtin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlin | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GENERALPURPOSEDUALOPERATIONALAMPLIFIERS [NEC] | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Internallyfrequency-compensated •Shortcircuitprotection | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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