首页 >T126L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PFMStep-UpDC/DCRegulators GeneralDescription TheTC125/126step-up(Boost)switchingregulatorsfurnishoutputcurrentstoamaximumof80mA(VIN=2V,VOUT=3V)withtypicalefficienciesabove80.Thesedevicesemploypulsefrequencymodulation(PFM)forminimumsupplycurrentatlowloads.Theyareidealforbattery-o | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
0.08nAUltrasmallIQ1.0ALoadSwitchICinUltraSmallPackage Feature Wideinputoperationvoltagerange:VIN=1.0to5.5V Highoutputcurrent:IOUT=1.0A UltrasmallQuiescentcurrent:IQ=0.08nAatVIN=VCT=5.5V,IOUT=0mA LowONresistance RON=58mΩ(typ.)atVIN=3.3V,IOUT=-0.5A RON=106mΩ(typ.)atVIN=1.8V,IOUT= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
0.08nAUltrasmallIQ1.0ALoadSwitchICinUltraSmallPackage Feature Wideinputoperationvoltagerange:VIN=1.0to5.5V Highoutputcurrent:IOUT=1.0A UltrasmallQuiescentcurrent:IQ=0.08nAatVIN=VCT=5.5V,IOUT=0mA LowONresistance RON=58mΩ(typ.)atVIN=3.3V,IOUT=-0.5A RON=106mΩ(typ.)atVIN=1.8V,IOUT= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HIGHENERGYSPARKGAPDEVICES DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp | Clare Clare, Inc. | Clare | ||
UltraSoftThermalPad Application: Usuallyusedforindustrialcomputers,militaryproducts Features •Highthermalconductivity •Lowhardness •Highcompressibility •Electricalinsulation | TGLOBAL T-Global Technology | TGLOBAL | ||
HIGHSTABILITYMOTORCONTROL.DIGITALTACHOMETER.CRANKSHAFTPOSITIONSENSOR. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SILICONCONTROLLEDRECTIFIERS 12AContinuousOn-StateCurrent 100ASurge-Current GlassPassivatedWafer 400Vto800VOff-StateVoltage MaxIGTof20mA | POINN Power Innovations Ltd | POINN | ||
P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS •12AContinuousOn-StateCurrent •100ASurge-Current •GlassPassivatedWafer •100Vto800VOff-StateVoltage •MaxIGTof20mA •CompliancetoROHS | COMSET Comset Semiconductor | COMSET | ||
P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS | COMSET Comset Semiconductor | COMSET | ||
P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS •12AContinuousOn-StateCurrent •100ASurge-Current •GlassPassivatedWafer •100Vto800VOff-StateVoltage •MaxIGTof20mA •CompliancetoROHS | COMSET Comset Semiconductor | COMSET |
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